FPN530 Datasheet, Equivalent, Cross Reference Search
Type Designator: FPN530
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-226
FPN530 Transistor Equivalent Substitute - Cross-Reference Search
FPN530 Datasheet (PDF)
..1. Size:47K fairchild semi
fpn530.pdf
fpn530.pdf
FPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 3.0 A continuous.Sourced from Process NC.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
