FPN530 Specs and Replacement

Type Designator: FPN530

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-226

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FPN530 datasheet

 ..1. Size:47K  fairchild semi

 fpn530.pdf pdf_icon

FPN530

FPN530 FPN530A TO-226 C B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base ... See More ⇒

Detailed specifications: FMBS549, FMBS5551, FMBSA06, FMBSA56, FPN330, FPN330A, FPN430, FPN430A, BC639, FPN530A, FPN560, FPN560A, FPN630, FPN630A, FPN660, FPN660A, FPNH10

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