FPN560A Datasheet, Equivalent, Cross Reference Search
Type Designator: FPN560A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO-226
FPN560A Transistor Equivalent Substitute - Cross-Reference Search
FPN560A Datasheet (PDF)
8.1. Size:47K fairchild semi
fpn560.pdf
fpn560.pdf
FPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for high current gain and lowsaturation voltage with collector currents up to 3.0 A continuous.Sourced from Process NA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 80 VVEBO Emitter-Base
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
