FPN560A Specs and Replacement

Type Designator: FPN560A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO-226

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FPN560A datasheet

 8.1. Size:47K  fairchild semi

 fpn560.pdf pdf_icon

FPN560A

FPN560 FPN560A TO-226 C B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base ... See More ⇒

Detailed specifications: FMBSA56, FPN330, FPN330A, FPN430, FPN430A, FPN530, FPN530A, FPN560, BC547B, FPN630, FPN630A, FPN660, FPN660A, FPNH10, FSB560, FSB560A, FSB619

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