FSB619 Specs and Replacement

Type Designator: FSB619

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: SSOT-3 SOT-23

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FSB619 datasheet

 ..1. Size:33K  fairchild semi

 fsb619.pdf pdf_icon

FSB619

Discrete Power & Signal Technologies July 1998 FSB619 C E B SuperSOTTM-3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FSB619 Units 50 V VCEO Collector-Emitter Voltage 50 V VCBO ... See More ⇒

Detailed specifications: FPN560A, FPN630, FPN630A, FPN660, FPN660A, FPNH10, FSB560, FSB560A, MJE350, FSB649, FSB660, FSB660A, FSB6726, FSB749, FSBCW30, FTM3725, FZT3019

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