FSB749 Datasheet and Replacement
Type Designator: FSB749
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SSOT-3 SOT-23
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FSB749 Datasheet (PDF)
fsb749.pdf

FSB749CEB SuperSOTTM-3 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process PC. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter FSB749 Units25 VVCEO Collector-Emitter Voltage35 VVCBO Collector-Base Voltage5 VVEBO Emit
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , D667 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: 2SC999A | ME0463 | SK6346 | 2N1056 | UN9217R | KT8107D2 | ECG2306
Keywords - FSB749 transistor datasheet
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History: 2SC999A | ME0463 | SK6346 | 2N1056 | UN9217R | KT8107D2 | ECG2306



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