FSB749 Specs and Replacement
Type Designator: FSB749
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 100
FSB749 Substitution
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FSB749 datasheet
FSB749 C E B SuperSOTTM-3 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process PC. Absolute Maximum Ratings* T A = 25 C unless otherwise noted Symbol Parameter FSB749 Units 25 V VCEO Collector-Emitter Voltage 35 V VCBO Collector-Base Voltage 5 V VEBO Emit... See More ⇒
Detailed specifications: FPNH10, FSB560, FSB560A, FSB619, FSB649, FSB660, FSB660A, FSB6726, A42, FSBCW30, FTM3725, FZT3019, KSA1015, KSA1203, KSA1281, KSA1625, KSB1116S
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