All Transistors. FSBCW30 Datasheet

 

FSBCW30 Datasheet and Replacement


   Type Designator: FSBCW30
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 215
   Noise Figure, dB: -
   Package: SSOT-3 SOT-23
 

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FSBCW30 Datasheet (PDF)

 ..1. Size:43K  fairchild semi
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FSBCW30

Discrete POWER & SignalTechnologiesFSBCW30CEBSuperSOTTM-3PNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 300 mA.Sourced from Process 68. See BC857A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter

Datasheet: FSB560 , FSB560A , FSB619 , FSB649 , FSB660 , FSB660A , FSB6726 , FSB749 , S9018 , FTM3725 , FZT3019 , KSA1015 , KSA1203 , KSA1281 , KSA1625 , KSB1116S , KSB798 .

History: TMPT2484 | MJ50AC100 | MH8212 | DBW47 | 2SC2654 | CK100 | KSC2715

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