FSBCW30 Specs and Replacement
Type Designator: FSBCW30
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 215
FSBCW30 Substitution
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FSBCW30 datasheet
Discrete POWER & Signal Technologies FSBCW30 C E B SuperSOTTM-3 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter ... See More ⇒
Detailed specifications: FSB560, FSB560A, FSB619, FSB649, FSB660, FSB660A, FSB6726, FSB749, D667, FTM3725, FZT3019, KSA1015, KSA1203, KSA1281, KSA1625, KSB1116S, KSB798
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