FTM3725 Specs and Replacement
Type Designator: FTM3725
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOIC-16
FTM3725 Substitution
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FTM3725 datasheet
FTM3725 B4 NPN Transistor E4 B4 E3 This device is designed for high current, low impedance line driver B2 E2 applications. B1 C4 E1 Sourced from process 26. C4 C4 C3 C2 C2 C1 C1 SOIC-16 Mark FTM3725 Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO E... See More ⇒
Detailed specifications: FSB560A, FSB619, FSB649, FSB660, FSB660A, FSB6726, FSB749, FSBCW30, BD333, FZT3019, KSA1015, KSA1203, KSA1281, KSA1625, KSB1116S, KSB798, KSC1815
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