FTM3725 Datasheet, Equivalent, Cross Reference Search
Type Designator: FTM3725
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOIC-16
FTM3725 Transistor Equivalent Substitute - Cross-Reference Search
FTM3725 Datasheet (PDF)
..1. Size:71K fairchild semi
ftm3725.pdf
ftm3725.pdf
FTM3725B4NPN TransistorE4B4E3 This device is designed for high current, low impedance line driver B2E2applications.B1C4E1 Sourced from process 26. C4C4C3C2C2C1C1SOIC-16Mark: FTM3725Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO E
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
