All Transistors. MMBT2369A Equivalents Search

PN2369A MMBT2369A C E C TO-92 B SOT-23 B E Mark 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Vo... See More ⇒

MMBT2369L, MMBT2369AL Switching Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and MARKING PPAP Capable DIAGRAM These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 xxx MG CASE 318 G STYLE 6 MAXIMUM RATINGS 1 Rating Symbo... See More ⇒

MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 M... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2369LT1/D MMBT2369LT1 Switching Transistors COLLECTOR * MMBT2369ALT1 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector Emitter Voltage VCEO 15 Vdc 2 Collector Emitter Voltage VCES 40 Vdc Collector Base Voltage VCBO 40 Vdc CASE 318 08, STYL... See More ⇒

MMBT2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. C E SOT-23 B Mark 1J Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.5 V ... See More ⇒

February 2008 MMBT2369 / PN2369 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark 1J 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emit... See More ⇒

MMBT2369LT1G, MMBT2369ALT1G Switching Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc 2 EMITTER Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage VEBO 4.5 Vd... See More ⇒

MMBT2369LT1G, SMMBT2369LT1G, MMBT2369ALT1G, SMMBT2369ALT1G Switching Transistors http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 S Prefix for Automotive and Other Applications Requiring Unique CASE 318 Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* COLLECTOR 3 M... See More ⇒

FM120-M WILLAS THRU MMBT2369(A)LT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Switching Transistors SOD-123 PACKAGE Pb Free Product Package outline Features We declare that the material of product compliance with RoHS requirements. Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD... See More ⇒