MMBT5770 Datasheet. Specs and Replacement
Type Designator: MMBT5770 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 0.01 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SOT-23
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MMBT5770 datasheet
February 2008 MMBT5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from process 43. 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collect... See More ⇒
2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5088LT1/D MMBT5088LT1 Low Noise Transistors * MMBT5089LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 5088LT1 5089LT1 Unit 2 Collector Emitter Voltage VCEO 30 25 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 35 30 Vdc SOT 23 (TO 236A... See More ⇒
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Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value U... See More ⇒
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -... See More ⇒
www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec... See More ⇒
Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH 1 1 BASE MMBT5551GH 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 140 Vdc Collector Base Voltage V CBO 160 Vdc Emitter B... See More ⇒
Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. MMBT5401GH 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 150 Vdc CEO 3 COLLECTOR Collector Base Voltage V CBO 160 Vdc Emitter Base Voltage V EBO 5.0 ... See More ⇒
MMBT5551 TRANSISTOR(NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 6... See More ⇒
MMBT5550 TRANSISTOR(NPN) SOT 23 FEATURES High Voltage Transistor MARKING M1F MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C PC Collector Power Dissipation 225 mW ... See More ⇒
MMBT58 9 TRANSISTOR(PNP) SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER MARKING 589 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5... See More ⇒
MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current ... See More ⇒
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5551 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage VCEO 160 Vdc - ... See More ⇒
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -150 Vdc - ... See More ⇒
MMBT5551 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Ba... See More ⇒
MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit... See More ⇒
MMBT589 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING 589 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitte... See More ⇒
MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http //www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc)... See More ⇒
MMBT5088 MMBT5089 COLLECTOR Low Noise NPN Transistor 3 3 Surface Mount 1 1 2 BASE P b Lead(Pb)-Free 2 SOT-23 EMITTER Maximum Ratings Rating Symbol 5088LT1 5089LT1 Unit Collector-Emitter Voltage V 30 25 Vdc CE O Collector-B as e Voltage VCB O 35 30 Vdc E m itter-B as e Voltage VE B O 4.5 Vdc Collector Current-Continuous IC mAdc 50 Thermal Characteristics Characteristics... See More ⇒
MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER MMBT5550 MMBT5551 V CEO 140 160 160 180 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) MMBT5550 140 1.0 , MMBT5551 160 MMBT5550 160 -100 , 180 MMBT5551 6.0 10 , WEITRON http //www.weitron.com.tw MMBT5550 MMBT5551 ELECTRICAL... See More ⇒
FM120-M MMBT5551DW1T1 WILLAS THRU DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low pr FEATUREofile surface mounted appli... See More ⇒
FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE Low profile surface mounted application in order to o... See More ⇒
FM120-M WILLAS THRU MMBT5551WT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY DUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in ... See More ⇒
FM120-M WILLAS MMBT555xLT1 THRU High Voltage Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize boa... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM -0.6 A Collector-base voltage V(BR)CBO -160 V Operating and storage junction temperature range Unit mm ... See More ⇒
Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM 0.3 W (Tamb=25 ) 1. 3 Collector current ICM 0.6 A Collector-base voltage V(BR)CBO 180 V Operating and storage junction temperature range Unit mm TJ, T... See More ⇒
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B... See More ⇒
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B... See More ⇒
MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , MMBT5551T(BR3DG5551T) High voltage, complementary Pair with MMBT5551T(BR3DG5551T). / Applications General purpose high voltag... See More ⇒
MMBT5551 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , MMBT5401 High voltage, complementary pair with MMBT5401. / Applications General purpose high voltage amplifier. / Eq... See More ⇒
MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , MMBT5401T(BR3CG5401T) High voltage, complementary pair with MMBT5401T(BR3CG5401T). / Applications General purpose high voltag... See More ⇒
MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) a Parameter Symbol Value Unit Collector Base Voltage -V 160 V CBO Collector Emitter Voltage -V 150 V CEO Emitt... See More ⇒
MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 150 C O ... See More ⇒
MMBT5401 PNP Silicon Epitaxial Planar Transistor for high voltage amplifier applications TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Power Dissipation Ptot 350 mW O Junction Temperature Tj 1... See More ⇒
SMD Type Transistors PNP Transistors MMBT5087 (KMBT5087) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-100mA Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage ... See More ⇒
SMD Type Transistors SMD Type NPN Transistors (KMBT5551) MMBT5551 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter volt... See More ⇒
SMD Type Transistors NPN Transistors MMBT5550 (KMBT5550) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=140V 1 2 High Voltage Transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
SMD Type Transistors SMD Type PNP Transistors MMBT5401 (KMBT5401) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter volta... See More ⇒
SMD Type Transistors NPN Transistors MMBT5088 (KMBT5088) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V... See More ⇒
SMD Type Transistors NPN Transistors MMBT5089 (KMBT5089) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=25V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V... See More ⇒
MMBT5551 NPN HIGH VOLTAGE TRANSISTOR 160 Volts POWER 250 mWatts VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20) MECHANICAL DATA 0.070(1.... See More ⇒
MMBT5401 HIGH VOLTAGE TRANSISTOR PNP Silicon FEATURES Lead free in compliance with EU RoHS 2.0 0.120(3.04) Green molding compound as per IEC 61249 standard 0.110(2.80) MECHANICAL DATA 0.056(1.40) 0.047(1.20) Case SOT-23 plastic case. Terminals Solderable per MIL-STD-750,Method 2026 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) Standard packaging 8mm ta... See More ⇒
General Purpose Transistor MMBT5401-G (PNP) RoHS Device SOT-23 Features -Epitaxial planar die construction. 0.119(3.00) 0.110(2.80) -Complementary NPN type available (MMBT5551-G). 3 -Ideal for medium power amplification and switching. 0.056(1.40) 0.047(1.20) 1 2 Diagram 0.006(0.15) 0.079(2.00) Collector 0.002(0.05) 0.071(1.80) 3 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.0... See More ⇒
Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G... See More ⇒
GSTMMBT5401 High Voltage PNP Transistors Product Description Features This device is designed as a general purpose Collector-Emitter Voltage -150V amplifier and switch. Collector-Base Voltage -160V Collector Current-Continuous -500mA Lead(Pb)-Free Packages & Pin Assignments GSTMMBT5401F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information... See More ⇒
MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collecto... See More ⇒
MMBT5401 FEATURES FEATURES FEATURES FEATURES PNP High Voltage Transistor MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO Collector-Base Voltage V -160 Vdc CBO Emitter-Base Voltage V -6.0 Vdc EBO Collector Current Continuous Ic -500 mAdc THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS... See More ⇒
R UMW UMW MMBT5401 SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Vo... See More ⇒
R UMW UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage... See More ⇒
MMBT5551 SOT-23 Features (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector Absolute Maximum Ratings (T =25 oC, unless otherwise noted) A Parameter Symbol Value Unit Collector Base Voltage V 180 V CBO Collector Emitter Voltage V 160 V CEO Emitter Base Voltage V 6 V EBO Collector Current I 600 mA C Powe... See More ⇒
MMBT5401 Features SOT-23 (TO-236) For Switching and Amplifier Applications. Silicon Epitaxial Chip 1 Base 2. Emitter 3. Collector oC, Absolute Maximum Ratings (T =25 unless otherwise A noted) Parameter Symbol Value Unit -V 160 V Collector Base Voltage CBO Collector Emitter Voltage -V 150 V CEO -V 6V Emitter Base Voltage EBO Collector Current -I 600 mA C P 350 mW Pow... See More ⇒
MMBT5550 / MMBT5551 High Voltage Transistors NPN Silicon Package outline Features High collector-emitterbreakdien voltage. SOT-23 (BV = 140V 160V@I =1mA) CEO C This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmental standards of... See More ⇒
MMBT5551 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING G1 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO... See More ⇒
MMBT5401 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS SOT-23 Features Complementary to MMBT5551 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING 2L 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCB... See More ⇒
MMBT5551 High Voltage Transistors NPN Silicon FEATURES Complementary to MMBT5401 SOT-23 Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio... See More ⇒
MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching MARKING 2L 3 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -160 V 2. EMITTER VCEO Collector-Emitter Voltage -150 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V IC Collect... See More ⇒
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V... See More ⇒
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 1. BASE Ideal for medium power amplification and switching 2. EMITTER 3. COLLECTOR - MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -15... See More ⇒
MMBT5551 HD-ST0.44 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking G1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V C CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Coll... See More ⇒
MMBT5401 HD-ST0.42 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching Marking 2L Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V V Collector-Emitter Voltage -150 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C ... See More ⇒
MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec... See More ⇒
MMBT5401 PNP General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT5551). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT V collector-base voltage -160 V CBO V ... See More ⇒
MMBT5551 TRANSISTOR(NPN) FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R ... See More ⇒
MMBT5401 TRANSISTOR(PNP) FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.6 A PC Collector Pow... See More ⇒
www.msksemi.com MMBT5401-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching 1. BASE MARKING 2L 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emit... See More ⇒
www.msksemi.com MMBT5551-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Complementary to MMBT5401-MS Ideal for Medium Power Amplification and Switching 1. BASE 2. EMITTER MARKING G1 SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Volt... See More ⇒
MMBT5401 GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability MIL-STD-202, Method 208 PB Free Products Are Available 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA... See More ⇒
MMBT5551 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1 ... See More ⇒
MMBT5401 PNP Transistor Features For High Voltage Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage -VCBO 160 V Collector Emitter Voltage -VCEO 150 V Emitter Base Voltage -VEBO 5 V Collector Current -I 600 mA C Power Dissipation P... See More ⇒
Jingdao Microelectronics co.LTD MMBT5551 MMBT5551 SOT-23 NPN TRANSISTOR 3 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 180 V 2.EMITTER Collector Emitter V... See More ⇒
Jingdao Microelectronics co.LTD MMBT5401 MMBT5401 SOT-23 PNP TRANSISTOR 3 FEATURES Complementary to MMBT5551 Ideal for Medium Power Amplification and Switching 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -160 V 2.EMITTER 3.COLLECTOR Collec... See More ⇒
MMBT5087 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications Marking 2Q SOT-23 Absolute Maximum Ratings (Ta = 25 OC) Characteristics at Ta = 25 OC REV.08 1 of 2 MMBT5087 REV.08 2 of 2 ... See More ⇒
MMBT5551DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT55... See More ⇒
MMBT5401DW Descriptions Double silicon PNP transistor in a SOT-363 Plastic Package. Features High voltage, complementary Pair with MMBT5551DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMB... See More ⇒
NPN General Purpose Amplifier For low noise, high gain, general purpose amplifier For low noise, high gain, general purpose amplifier applications at collector currents from 1 A to 50mA. applications at collector currents from 1 A to 50mA. 1 Base 2 Emitter 3 Collector 1 Base 2 Emitter 3 Collector Marking Marking 1RM SOT-23 Plastic Package 23 Plastic Package Absolu... See More ⇒
Integrated in OVP&OCP products provider MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi... See More ⇒
Integrated in OVP&OCP products provider MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emit... See More ⇒
mmbt5401 mmbt5401-l mmbt5401-h.pdf
MMBT5401 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector High Voltage Transistors Pb-Free Packages are Available Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector P... See More ⇒
MMBT5551 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High Voltage Transistors Simplified outline(SOT-23) Pb-Free Packages are Available Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.6 A Collector Powe... See More ⇒
MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -160 V VCEO Collector-Emitter Voltage - -150 V VEBO Emitter-Base Vo... See More ⇒
MMBT5401 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5551 ; Complementary to MMBT5551 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack... See More ⇒
MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack... See More ⇒
MMBT5551 MMBT5551 AO3400 SI2305 MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1 BASE MARKING G1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Volt... See More ⇒
MMBT3904 MMBT5401 AO3400 SI2305 MMBT5401 TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching SOT-23 1 BASE 2 EMITTER MARKING 2L 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Vo... See More ⇒
RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solder... See More ⇒
RoHS RoHS COMPLIANT COMPLIANT MMBT5401Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solderable per J-... See More ⇒
RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking G1 Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0... See More ⇒
RoHS COMPLIANT MMBT5401 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking 2L Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=-1.0mAdc, IB=0 -160 Collector-Base Voltage VCBO V IC=-100uAdc, IE=0 -180 Emitter-Base Voltage VEBO V IE=-10uAdc, IC... See More ⇒
MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5551 G1 . Maximum Ra... See More ⇒
MMBT5401 MMBT5401 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES Complementary to MMBT5551 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5401 2L . Maximum Ra... See More ⇒
SOT-523 Plastic-Encapsulate Transistors TRANSISTOR ( PNP) MMBT5401T SOT 523 FEATURES Complementary to MMBT5551W Small Surface Mount Package Ideal for Medium Power Amplificationand Switching MARKING K4M 1. BASE 2. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector-Emi... See More ⇒
Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+PNP) FEATURES Epitaxial Planar Die Construction 6 5 Ideal for low Power Amplification and Switching 4 One 5551(NPN), one 5401(PNP) 1 2 3 MRKING KNM MAXIMUM RATINGS NPN 5551 (Ta=25 unless otherwise noted) Symbol Para... See More ⇒
MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren... See More ⇒
MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren... See More ⇒
MMBT5551T TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V V CEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V I Collector Current -Continuous 0.6 A C P Collector Power Dissipation 200... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5551 FEATURES NPN High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage V 160 Vdc CEO - Collector Base Voltage V 180 Vdc CBO - Emitter ... See More ⇒
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5401 FEATURES PNP High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage V -150 Vdc CEO - Collector-Base Voltage V -160 Vdc CBO - Emitte... See More ⇒
MMBT5551 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 160Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V. Collector current IC=0.6A. ansition frequency fT>100MHz @ Tr IC=10mAdc, VCE=6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S... See More ⇒
MMBT5401 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE -150Volts POWER 300mWatts FEATURES PNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-150V. Collector current IC=-0.6A. ansition frequency fT>100MHz @ IC=- Tr 20mAdc, VCE=-6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminal... See More ⇒
MMBT5551 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb... See More ⇒
MMBT5401 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT5551 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb... See More ⇒
NPN MMBT5551 MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter... See More ⇒
PNP MMBT5401 MMBT5401 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to MMBT5551 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter V... See More ⇒
MMBT5551 TRANSISTOR(NPN) SOT-23 Plastic-Encapsulate Transistors SOT-23 Features Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 Small Outline Plastic Package UL Epoxy UL 94V-0 Mounting Position Any Marking G1 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unl... See More ⇒
Detailed specifications: PN2369A, MMBT2369A, MMBT2907AK, MMBT3702, MMBT3904K, MMBT3906K, MMBT4401K, MMBT4403K, 2N2222A, MMBTH10RG, MMBTH11, MMBTH34, MP4501, MP4504, MPSW3725, NTE291, NTE292
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