NZT651 Specs and Replacement
Type Designator: NZT651
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SOT-223
NZT651 Substitution
- BJT ⓘ Cross-Reference Search
NZT651 datasheet
NZT651 C E C B SOT-223 NPN Current Driver Transistor This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V V Collector-Base Voltage 80 V CBO VEBO Emitter-Base Voltage 5.0 V IC Collec... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: MP4501, MP4504, MPSW3725, NTE291, NTE292, NZT560, NZT560A, NZT605, BD335, NZT660, NZT660A, NZT6714, TN6714A, NZT6715, TN6715A, NZT6717, TN6717A
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