NZT660 Specs and Replacement
Type Designator: NZT660
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-223
NZT660 Substitution
- BJT ⓘ Cross-Reference Search
NZT660 datasheet
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
April 2005 NZT660/NZT660A PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 4 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter NZT660 NZT660A Units VCEO Collector-Emitter Voltage 60 60 V VCBO Collector-Bas... See More ⇒
Detailed specifications: MP4504, MPSW3725, NTE291, NTE292, NZT560, NZT560A, NZT605, NZT651, A940, NZT660A, NZT6714, TN6714A, NZT6715, TN6715A, NZT6717, TN6717A, NZT6726
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