PN3440 Datasheet and Replacement
Type Designator: PN3440
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-92 SOT-54
PN3440 Substitution
PN3440 Datasheet (PDF)
pn3439 pn3440 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PN3439; PN3440NPN high-voltage transistors1997 Sep 04Product specificationSupersedes data of 1997 Jun 17File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN high-voltage transistors PN3439; PN3440FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max.
Datasheet: NZT6728 , TN6728A , NZT6729 , TN6729A , NZT749 , NZT751 , NZT753 , PN3439 , 2SD313 , PU3117 , PUA3117 , PUA3228 , PZTA29 , SD1391 , SD1398 , SJ5436 , SJ5437 .
History: BSW19VI | UMC5 | 3DA3063 | BC257VI | 3DA30G | GT125I | DRA9A43Z
Keywords - PN3440 transistor datasheet
PN3440 cross reference
PN3440 equivalent finder
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History: BSW19VI | UMC5 | 3DA3063 | BC257VI | 3DA30G | GT125I | DRA9A43Z



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