PN3440 Specs and Replacement
Type Designator: PN3440
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
PN3440 Substitution
- BJT ⓘ Cross-Reference Search
PN3440 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN3439; PN3440 NPN high-voltage transistors 1997 Sep 04 Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors PN3439; PN3440 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max.... See More ⇒
Detailed specifications: NZT6728, TN6728A, NZT6729, TN6729A, NZT749, NZT751, NZT753, PN3439, A1013, PU3117, PUA3117, PUA3228, PZTA29, SD1391, SD1398, SJ5436, SJ5437
Keywords - PN3440 pdf specs
PN3440 cross reference
PN3440 equivalent finder
PN3440 pdf lookup
PN3440 substitution
PN3440 replacement
