PUA3117 Specs and Replacement
Type Designator: PUA3117
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 500
Package: SIP8-A1
PUA3117 Substitution
- BJT ⓘ Cross-Reference Search
PUA3117 datasheet
Power Transistor Arrays PUA3117 (PU3117) Silicon NPN triple diffusion planar type For power amplification and switching Unit mm 20.2 0.3 4.0 0.2 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE 0.8 0.25 NPN 3 elements 0.5 0.15 1.0 0.25 Absolute Maximum Ratings TC = 25 C 0.5 0.15 2.54 0.2 Pa... See More ⇒
Detailed specifications: NZT6729, TN6729A, NZT749, NZT751, NZT753, PN3439, PN3440, PU3117, S9013, PUA3228, PZTA29, SD1391, SD1398, SJ5436, SJ5437, SJ5439, STS8550
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