SJ5439 Datasheet and Replacement

SJ5439SEMELABMECHANICAL DATADimensions in mm (inches)NPN DRIVERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.1 2 Bipolar Power Transistor TO66 Hermetic Package Fast Switching1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Metal Package.Pin 1 Base Pin 2 Emitter Case

2SJ543 Silicon P Channel MOS FET REJ03G0890-0400 (Previous: ADE-208-652B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Fla

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

SJ5437SEMELABMECHANICAL DATADimensions in mm (inches)PNP DRIVER24.38(0.960)min. TRANSISTOR123 Bipolar Power Transistor TO63 Hermetic Package Fast Switching19.35(0.762)max.7.94(5/16) UNF 2ATO63 Metal Package.Pin 1 Base Pin 2 Emitter Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)VCEO Collec

SJ5436SEMELABMECHANICAL DATADimensions in mm (inches)NPN DRIVER24.38(0.960)min. TRANSISTOR123 Bipolar Power Transistor TO63 Hermetic Package Fast Switching19.35(0.762)max.7.94(5/16) UNF 2ATO63 Metal Package.Pin 1 Base Pin 2 Emitter Case CollectorABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)VCEO Collec

SJ5438SEMELABMECHANICAL DATADimensions in mm (inches)PNP DRIVERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.1 2 Bipolar Power Transistor TO63 Hermetic Package Fast Switching1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Metal Package.Pin 1 Base Pin 2 Emitter Case