All Transistors. TN5415A Datasheet

 

TN5415A Datasheet and Replacement


   Type Designator: TN5415A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-226
 

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TN5415A Datasheet (PDF)

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TN5415A

Discrete POWER & SignalTechnologiesTN5415ATO-226CBEPNP High Voltage AmplifierThis device is designed for use as high voltage drivers requiringcollector currents to 100 mA. Sourced from Process 76. SeeMPSA92 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 200 VV Collector-Base Vo

Datasheet: SJ5436 , SJ5437 , SJ5439 , STS8550 , TN3019A , TN3440A , TN4033A , TN5320A , D882P , TN6705A , TN6707A , TN6716A , TN6718A , TN6719A , TN6725A , TN6727A , ZTX749A .

History: 3CA42A

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