TN5415A Datasheet, Equivalent, Cross Reference Search
Type Designator: TN5415A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO-226
TN5415A Transistor Equivalent Substitute - Cross-Reference Search
TN5415A Datasheet (PDF)
..1. Size:25K fairchild semi
tn5415a.pdf
tn5415a.pdf
Discrete POWER & SignalTechnologiesTN5415ATO-226CBEPNP High Voltage AmplifierThis device is designed for use as high voltage drivers requiringcollector currents to 100 mA. Sourced from Process 76. SeeMPSA92 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 200 VV Collector-Base Vo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
