All Transistors. TN5415A Datasheet

 

TN5415A Datasheet and Replacement


   Type Designator: TN5415A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO-226
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TN5415A Datasheet (PDF)

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TN5415A

Discrete POWER & SignalTechnologiesTN5415ATO-226CBEPNP High Voltage AmplifierThis device is designed for use as high voltage drivers requiringcollector currents to 100 mA. Sourced from Process 76. SeeMPSA92 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 200 VV Collector-Base Vo

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD1618S | 2SC5331 | RT1N130C | FK2369A | 2SD591 | KSE181 | 2SD294

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