TN5415A Specs and Replacement
Type Designator: TN5415A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO-226
TN5415A Substitution
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TN5415A datasheet
Discrete POWER & Signal Technologies TN5415A TO-226 C B E PNP High Voltage Amplifier This device is designed for use as high voltage drivers requiring collector currents to 100 mA. Sourced from Process 76. See MPSA92 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 200 V V Collector-Base Vo... See More ⇒
Detailed specifications: SJ5436, SJ5437, SJ5439, STS8550, TN3019A, TN3440A, TN4033A, TN5320A, 2SC2240, TN6705A, TN6707A, TN6716A, TN6718A, TN6719A, TN6725A, TN6727A, ZTX749A
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