ZTX749A Datasheet and Replacement
Type Designator: ZTX749A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-226
ZTX749A Substitution
ZTX749A Datasheet (PDF)
ztx749a.pdf

ZTX749APNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.CTO-226BEAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -35 VVCBO Collector-Base Voltage -45 VVEBO Emitter-Base Voltage -5 VIC Collector Current -
ztx749.pdf

ZTX749PNP Low Saturation Transistor This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.CTO-226BEAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -25 VVCBO Collector-Base Voltage -35 VVEBO Emitter-Base Voltage -5 VIC Collector Current -
ztx749.pdf

PNP SILICON PLANAR9 ZTX749MEDIUM POWER TRANSISTORISSUE 1 APRIL 94. T V I V i i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I IT Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V V I I
Datasheet: TN5415A , TN6705A , TN6707A , TN6716A , TN6718A , TN6719A , TN6725A , TN6727A , 2SC2482 , UNR1110 , UNR1111 , UNR1112 , UNR1113 , UNR1114 , UNR1115 , UNR1116 , UNR1117 .
History: PZT359 | 2N5401AI | MMT72 | CZD772
Keywords - ZTX749A transistor datasheet
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History: PZT359 | 2N5401AI | MMT72 | CZD772



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