UNR1111 Datasheet. Specs and Replacement

Type Designator: UNR1111  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: M-A1

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UNR1111 datasheet

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Detailed specifications: TN6707A, TN6716A, TN6718A, TN6719A, TN6725A, TN6727A, ZTX749A, UNR1110, 2SC828, UNR1112, UNR1113, UNR1114, UNR1115, UNR1116, UNR1117, UNR1118, UNR1119

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