2N6361 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2N6361 Specs and Replacement

Type Designator: 2N6361

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 33 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO129

2N6361 Substitution

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2N6361 datasheet

9.1. Size:449K 1

2n6368.pdf pdf_icon

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9.2. Size:148K jmnic

2n6360.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒

9.3. Size:116K inchange semiconductor

2n6360.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒

Detailed specifications: 2N6355, 2N6356, 2N6357, 2N6358, 2N6359, 2N635A, 2N636, 2N6360, 2SC4793, 2N6362, 2N6363, 2N6364, 2N6365, 2N6365A, 2N6366, 2N6367, 2N6368