2N6365A PDF and Equivalents Search

 

2N6365A Specs and Replacement

Type Designator: 2N6365A

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 100 °C

Electrical Characteristics

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO39

 2N6365A Substitution

- BJT ⓘ Cross-Reference Search

 

2N6365A datasheet

 9.1. Size:449K  1

2n6368.pdf pdf_icon

2N6365A

... See More ⇒

 9.2. Size:148K  jmnic

2n6360.pdf pdf_icon

2N6365A

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒

 9.3. Size:116K  inchange semiconductor

2n6360.pdf pdf_icon

2N6365A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒

Detailed specifications: 2N635A, 2N636, 2N6360, 2N6361, 2N6362, 2N6363, 2N6364, 2N6365, B772, 2N6366, 2N6367, 2N6368, 2N6369, 2N636A, 2N637, 2N6370, 2N6371

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