2N6369 Datasheet. Specs and Replacement

Type Designator: 2N6369  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 220 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: 211-02

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2N6369 datasheet

 9.1. Size:449K  1

 2n6368.pdf pdf_icon

2N6369

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 9.2. Size:148K  jmnic

 2n6360.pdf pdf_icon

2N6369

JMnic Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION 1 Base 2 Emit... See More ⇒

 9.3. Size:116K  inchange semiconductor

 2n6360.pdf pdf_icon

2N6369

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6360 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain Excellent safe operating area APPLICATIONS Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. PINNING PIN DESCRIPTION... See More ⇒

Detailed specifications: 2N6362, 2N6363, 2N6364, 2N6365, 2N6365A, 2N6366, 2N6367, 2N6368, BD135, 2N636A, 2N637, 2N6370, 2N6371, 2N6372, 2N6373, 2N6374, 2N6375

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