DN050S Specs and Replacement

Type Designator: DN050S

SMD Transistor Code: N02

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-23

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DN050S datasheet

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DN050S

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DN050S

RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 External dimensions (Unit mm) Structure Silicon N-channel TO-220FN 10.0 4.5 3.2 2.8 MOS FET Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) (3)Source Application Switching... See More ⇒

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DN050S

DN050 NPN Silicon Transistor Features PIN Connection Extremely low collector-to-emitter C saturation voltage ( VCE(SAT)=0.07V Typ. @IC/IB=100mA/10mA) Suitable for low voltage large current drivers B Complementary pair with DP050 Switching Application. E TO-92 Ordering Information Type NO. Marking Package Code DN050 DN050 TO-92 Absolute maximu... See More ⇒

Detailed specifications: BC858F, BC858U, BC858UF, DN030, DN030E, DN030S, DN030U, DN050, D882P, DN100, DN100S, DN200, DN200F, DN500, DN500F, DN500P, DP030

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