All Transistors. DN200 Datasheet

 

DN200 Datasheet and Replacement


   Type Designator: DN200
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Collector Capacitance (Cc): 5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO-92
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DN200 Datasheet (PDF)

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DN200

DN200NPN Silicon TransistorFeatures PIN Connection Extremely low collector-to-emitter Csaturation voltage ( VCE(SAT)= 0.2V Typ. @IC/IB=1A/50mA) Suitable for low voltage large current drivers B Complementary pair with DP200 Switching Application E TO-92 Ordering Information Type NO. Marking Package Code DN200 DN200 TO-92 Absolute maximum ra

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DN200

DN200FNPN Silicon TransistorPIN Connection Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.2V Typ. @IC/IB=1A/50) Suitable for low voltage large current drivers Complementary pair with DP200F Switching Application SOT-89 Ordering Information Type NO. Marking Package Code N04 DN200F SOT-89 YWW 04: DEVICE CODE,

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: STC1737 | DDTB123EU | K8550S-E | 2SC5094 | LDTD123YLT1G | BU134 | 2SD189

Keywords - DN200 transistor datasheet

 DN200 cross reference
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