SBT5551F Specs and Replacement

Type Designator: SBT5551F

SMD Transistor Code: FNF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

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SBT5551F datasheet

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SBT5551F

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SBT5551F

SBT5551 NPN Silicon Transistor PIN Connection Descriptions General purpose amplifier High voltage application Features high collector breakdown voltage VCBO = 180V, VCEO = 160V Low collector saturation voltage VCE(sat)=0.5V(MAX.) Complementary pair with SBT5401 SOT-23 Ordering Information Type NO. Marking Package Code FNF SBT5551 SOT-2... See More ⇒

Detailed specifications: SBT3904U, SBT3904UF, SBT3906, SBT3906F, SBT3906UF, SBT5401, SBT5401F, SBT5551, 2SA1837, SPS8050, SPS8550, STA124, STA124M, STA124S, STA124SF, STA733, STA8550SF

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