All Transistors. 2N637A Datasheet

 

2N637A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N637A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

 2N637A Transistor Equivalent Substitute - Cross-Reference Search

   

2N637A Datasheet (PDF)

 9.1. Size:302K  1
2n6370.pdf

2N637A
2N637A

 9.2. Size:171K  motorola
2n6379re.pdf

2N637A
2N637A

Order this documentMOTOROLAby 2N6379/DSEMICONDUCTOR TECHNICAL DATA2N6379*High-Power PNP Silicon*Motorola Preferred DeviceTransistors50 AMPEREPOWER TRANSISTORS. . . designed for use in industrialmilitary power amplifier and switching circuitPNP SILICONapplications.80, 100, 120 VOLTS High Collector Emitter Sustaining Voltage 250 WATTSVCEO(sus) = 120 Vdc (M

 9.3. Size:114K  central
2n5954 2n5955 2n5956 2n6372 2n6373 2n6374.pdf

2N637A
2N637A

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 9.4. Size:202K  comset
2n6253-2n6254-2n6371.pdf

2N637A
2N637A

2N6253 - 2N6254 - 2N6371HIGH POWER SILICON NPN TRANSISTORSThe 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a widevariety of high-power applications. The construction of these devices renders themhighly resistant to second breakdown over a wide range of operating conditions.These devices differ in maximum ratings for voltage and power dissipation. All aresuppli

 9.5. Size:148K  jmnic
2n6371.pdf

2N637A
2N637A

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and s

 9.6. Size:151K  jmnic
2n6372 2n6373 2n6374.pdf

2N637A
2N637A

JMnic Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ra

 9.7. Size:116K  inchange semiconductor
2n6371.pdf

2N637A
2N637A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified out

 9.8. Size:220K  inchange semiconductor
2n6378.pdf

2N637A
2N637A

isc Silicon PNP Power Transistor 2N6378DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-100V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -120 VCBOV Collector-Emitter Voltage

 9.9. Size:118K  inchange semiconductor
2n6372 2n6373 2n6374.pdf

2N637A
2N637A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6372 2N6373 2N6374 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area APPLICATIONS Designed for switching and wide-band amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAb

 9.10. Size:219K  inchange semiconductor
2n6377.pdf

2N637A
2N637A

isc Silicon PNP Power Transistor 2N6377DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -100 VCBOV Collector-Emitter Voltage -

Datasheet: 2N6374 , 2N6375 , 2N6376 , 2N6377 , 2N6377E , 2N6378 , 2N6378E , 2N6379 , 13001-A , 2N637B , 2N638 , 2N6380 , 2N6381 , 2N6382 , 2N6383 , 2N6384 , 2N6385 .

 

 
Back to Top