STC221F Datasheet, Equivalent, Cross Reference Search
Type Designator: STC221F
SMD Transistor Code: C221
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT-89
STC221F Transistor Equivalent Substitute - Cross-Reference Search
STC221F Datasheet (PDF)
stc221f.pdf
STC221FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High current application Features High hFE : hFE=160~320 Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. Marking Package Code C221 STC221F SOT-89 YWW C221: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute ma
stc2201.pdf
S TC 2201S amHop Microelectronics C orp.Mar 15 2005 ver1.2P-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y FEATUR ESS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.145 @ VGS = -4.5V-20V -2AS OT-323 package.195 @ VGS = -2.5VDSOT-323GSAB S OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise not
stc2200.pdf
GreenProductS TC 2200S amHop Microelectronics C orp.Mar 15 2005 ver1.2N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.85 @ VG S = 4.5V20V 2.3AS OT-323 package.110 @ VG S = 2.5VDS OT-323GSAB S OLUTE MAXIMUM R ATING (TA=25 C u
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
