STS1980 Datasheet. Specs and Replacement

Type Designator: STS1980

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO-92

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STS1980 datasheet

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STS1980

STS1980 Semiconductor Semiconductor PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage VCE(sat)=-0.3V(Max.) Low output capacitance Cob=4pF(Typ.) Complementary pair with STS5343 Ordering Information Type NO. Marking Package Code STS1980 STS1980 TO-92 Outline Dimensions unit mm 3.45 0... See More ⇒

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STS1980

STS19N3LLH6 N-channel 30 V, 0.0049 , 19 A, SO-8 STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max 5 6 7 8 STS19N3LLH6 30 V 0.0056 19 A RDS(on) * Qg industry benchmark 4 3 2 Extremely low on-resistance RDS(on) 1 High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Applications Switch... See More ⇒

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STS1980

STS1979 Semiconductor Semiconductor PNP Silicon Transistor Description Medium power amplifier Features Large collector current ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with STS5342 Ordering Information Type NO. Marking Package Code STS1979 STS1979 TO-92 Outline Dimensions unit mm 3.45 0.1 4.5... See More ⇒

Detailed specifications: STN2907S, STN2907SF, STN3904, STN3904S, STN3904SF, STN3906, STN3906S, STS1979, BDT88, STS5343, STS733, STS8050, STS9012, STS9013, STS9014, STS9015, STS9018

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