2N6386 Datasheet. Specs and Replacement
Type Designator: 2N6386 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220
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2N6386 datasheet
..1. Size:158K jmnic
2n6386 2n6387 2n6388.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to ... See More ⇒
..2. Size:121K inchange semiconductor
2n6386 2n6387 2n6388.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base Collecto... See More ⇒
9.1. Size:164K motorola
2n6387 2n6388.pdf
Order this document MOTOROLA by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 Plastic Medium-Power 2N6388* Silicon Transistors *Motorola Preferred Device . . . designed for general purpose amplifier and low speed switching applications. DARLINGTON High DC Current Gain 8 AND 10 AMPERE hFE = 2500 (Typ) @ IC = 4.0 Adc NPN SILICON Collector Emitter Sustaining Voltage... See More ⇒
9.2. Size:109K st
2n6388.pdf
2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power 3 2 transistor in monolithic Darlington configuration 1 mounted in Jedec TO-220 plastic package. It is inteded for use in low and mediu... See More ⇒
9.3. Size:205K central
2n6383 2n6384 2n6385.pdf
TM 2N6383 Central 2N6384 Semiconductor Corp. 2N6385 NPN SILICON POWER DESCRIPTION DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N6383 2N6384 2N6385 UNITS Collector-Base Voltage VCBO 40 60 80 V Coll... See More ⇒
9.5. Size:19K semelab
2n6385smd05.pdf
2N6385SMD05 MECHANICAL DATA Dimensions in mm (inches) SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. FEATURES 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) High Gain Darlington Performance 1 3 2 APPLICATIONS Audio Amplifiers Hammer Drivers 0.127 (0.005) Shunt and Series Regulators 16 PLCS 0.127 (0.005) 0.50(0.020)... See More ⇒
9.6. Size:87K cdil
2n6387 8.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N6387 NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS 2N6388 TO-220 Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N6387 2N6388 UNIT VCEO Collector Emitter Voltage 60 80 V VCBO Collector Base Voltage... See More ⇒
9.7. Size:153K jmnic
2n6383 2n6384 2n6385.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION 1 B... See More ⇒
9.8. Size:41K hsmc
h2n6388.pdf
Spec. No. HE6714 HI-SINCERITY Issued Date 1992.12.15 Revised Date 2004.11.03 MICROELECTRONICS CORP. Page No. 1/4 H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N6388 is designed for general-purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ........................................... See More ⇒
9.9. Size:118K inchange semiconductor
2n6383 2n6384 2n6385.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN... See More ⇒
9.10. Size:120K inchange semiconductor
2n6388.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION With TO-220 package High current capability DARLINGTON APPLICATIONS Intended for use in low and medium frequency power applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET... See More ⇒
Detailed specifications: 2N637B, 2N638, 2N6380, 2N6381, 2N6382, 2N6383, 2N6384, 2N6385, NJW0281G, 2N6387, 2N6388, 2N6389, 2N638A, 2N638B, 2N639, 2N6390, 2N6391
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