13003BS PDF and Equivalents Search

 

13003BS Specs and Replacement

Type Designator: 13003BS

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-251 TO-126 TO-92

 13003BS Substitution

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13003BS datasheet

 ..1. Size:165K  utc

13003bs.pdf pdf_icon

13003BS

UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130... See More ⇒

 8.1. Size:765K  secos

bd13003b.pdf pdf_icon

13003BS

BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2 A B Range 2-2.5 ( s) 2.5-3 ( s) E F Product-Rank BD13003B-B1 BD13003B-B2 C N H Range 3-3.5 ( s) 3.5... See More ⇒

 8.2. Size:2520K  secos

3dd13003b.pdf pdf_icon

13003BS

3DD13003B 1.5A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Power switching applications A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 Collector E 0.36 0.56 2 E C F 0.36 0.51 F G 1.27 TYP. H 1.10 - J 2... See More ⇒

 8.3. Size:399K  taiwansemi

ts13003bct.pdf pdf_icon

13003BS

TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T... See More ⇒

Detailed specifications: SUT562EF , SUT575EF , 4124 , 4126 , 4128 , 5302 , 13002AH , 13003ADA , BD335 , 13003DE , 13003DF , 13003DH , 13003DW , 13003EDA , 13005EC , 2SA1627A , 2SC5027E .

History: 2SA1313Y | A1480 | HP32B | 13003DF | 13003DW | 2SA970GR | 13002AH

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