All Transistors. 13003DW Datasheet

 

13003DW Datasheet, Equivalent, Cross Reference Search

Type Designator: 13003DW

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO-251_TO-126_TO-92

13003DW Transistor Equivalent Substitute - Cross-Reference Search

 

13003DW Datasheet (PDF)

1.1. 13003dw.pdf Size:166K _utc

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UNISONIC TECHNOLOGIES CO., LTD 13003DW Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION ? DESCRIPTION The UTC 13003DW is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage and high reliability, etc. The UTC 13003DW is suitable for electronic ball

4.1. sbr13003d.pdf Size:354K _update

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SBR13003D SBR13003D SBR13003D SBR13003D High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor High Voltage Fast-Switching NPN Power Transistor Features Features Features Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA ◆ Built-in freewheeling

4.2. mje13003di3.pdf Size:302K _update

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MJE13003DI3(3DD13003DI3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V

4.3. st13003dn.pdf Size:163K _update

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ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated free-wheeling diode 3 Application 2 1 ■ Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high swi

4.4. mje13003dk7.pdf Size:244K _update

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MJE13003DK7(3DD13003DK7) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.5. mje13003dg5.pdf Size:428K _update

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MJE13003DG5(3DD13003DG5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700

4.6. mje13003dk1.pdf Size:238K _update

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MJE13003DK1(3DD13003DK1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.7. mje13003di1.pdf Size:291K _update

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MJE13003DI1(3DD13003DI1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.8. mje13003di5.pdf Size:346K _update

13003DW
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MJE13003DI5(3DD13003DI5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 800 V

4.9. mje13003dg1.pdf Size:412K _update

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MJE13003DG1(3DD13003DG1) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.10. mje13003dn5.pdf Size:261K _update

13003DW
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MJE13003DN5(3DD13003DN5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.11. sbp13003d.pdf Size:560K _update

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SBP13003D SBP13003D SBP13003D SBP13003D High Voltage Fast -Switching NPN Power Transistor Features symbol symbol symbol symbol � Very High Switching Speed 2.Collector � High Voltage Capability � Wide Reverse Bias SOA 1.Base � Built-in free wheeling diode 3.Emitter General Description This Device is designed for high Voltage ,High speed switching Characteristics requir

4.12. mje13003dk3.pdf Size:238K _update

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MJE13003DK3(3DD13003DK3) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 700 V

4.13. apt13003di-du-dz.pdf Size:413K _update

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 Data Sheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003D General Description Features The APT13003D is a high voltage, high speed, high · High Switching Speed efficiency switching transistor, and it is specially · High Collector-Emitter Voltage: 700V designed for off-line switch mode power supplies with · Low Cost low output power. · High Efficiency The APT13003D

4.14. mje13003dk5.pdf Size:246K _update

13003DW
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MJE13003DK5(3DD13003DK5) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 600 V

4.15. st13003dn.pdf Size:160K _st

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ST13003DN High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated free-wheeling diode 3 Application 2 1 Compact fluorescent lamps (CFLs) SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching Figu

4.16. st13003d-k.pdf Size:141K _st

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ST13003D-K High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 1 2 3 Applications SOT-32 Electronic ballast for fluorescent lighting Description Figure 1. Internal schematic diagram The

4.17. 13003df.pdf Size:158K _utc

13003DW
13003DW

UNISONIC TECHNOLOGIES CO., LTD 13003DF Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION ? DESCRIPTION The UTC 13003DF is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DF

4.18. mje13003d-p.pdf Size:126K _utc

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13003DW

UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low

4.19. 13003dh.pdf Size:166K _utc

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UNISONIC TECHNOLOGIES CO., LTD 13003DH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION ? DESCRIPTION The UTC 13003DH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DH

4.20. mje13003d.pdf Size:204K _utc

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UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ? DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. ? FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High

4.21. 13003de.pdf Size:159K _utc

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UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS ? DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003DE is suitable for e

4.22. std13003d.pdf Size:317K _auk

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STD13003D NPN Silicon Power Transistor Applications PIN Connection • Power amplifier application • High current switching application Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control TO-252 Ordering Information Type NO. Marking Package Code STD13003D STD13003 TO-252 Absolute Maximum Ratings (Ta=25?) Cha

4.23. cd13003d.pdf Size:288K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CD13003D TO126 Plastic Package With Built - in Integrated Diode between Emitter & Collector ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 600 V Collector Emitter (sus) Voltage VCEO 400 V Emitter Base Voltage VEBO 9.0 V Collector Cu

4.24. mje13003d.pdf Size:128K _inchange_semiconductor

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INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V

4.25. hmje13003d.pdf Size:51K _hsmc

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Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-126ML • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings (T

4.26. mje13003d 1.pdf Size:232K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

4.27. mje13003d.pdf Size:477K _sisemi

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深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS MJE13003D NPN D / D SERIES TRANSISTORS MJE13003D NPN D 系列晶体

4.28. btn13003d3.pdf Size:250K _cystek

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Spec. No. : C827D3 Issued Date : 2012.04.09 CYStech Electronics Corp. Revised Date : Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTN13003D3 Features • High breakdown voltage, V =450V (min.) CEO • High collector current, I =1.5A (DC) C(max) • Pb-free package Symbol Outline BTN13003D3 TO-126ML B:Base C:Collector E:Emitter E C B Abs

4.29. bu13003d.pdf Size:110K _jdsemi

13003DW
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R BU13003D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2

4.30. p13003d.pdf Size:116K _jdsemi

13003DW
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R P13003D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.

4.31. h13003d 3.pdf Size:117K _jdsemi

13003DW
13003DW

R H13003D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.

4.32. h13003d 2.pdf Size:116K _jdsemi

13003DW
13003DW

R H13003D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.

4.33. h13003d.pdf Size:117K _jdsemi

13003DW
13003DW

R H13003D 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2. 2. 2.

4.34. h13003dl.pdf Size:117K _jdsemi

13003DW
13003DW

R H13003DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2

4.35. s13003dl.pdf Size:118K _jdsemi

13003DW
13003DW

R S13003DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2

4.36. s13003dl 2.pdf Size:118K _jdsemi

13003DW
13003DW

R S13003DL 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn Bipolar Junction Transistor ShenZhen Jingdao Electronic Co.,Ltd. ◆Si NPN ◆RoHS COMPLIANT 1. 1. 1.APPLICATION 1. Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2. 2. 2

4.37. mje13003d.pdf Size:299K _first_silicon

13003DW
13003DW

SEMICONDUCTOR MJE13003D TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. A I C J FEATURES Excellent Switching Times : ton=1.1μS(Max.), tf=0.5μS(Max.), at IC=1.0A DIM MILLIMETERS A 6 50 ± 0 2 High Collector Voltage : VCBO=700V. B 5 60 ± 0 2 C 5 20 ± 0 2 D 1 50 ± 0 2 MAXIMUM RATING (Ta=25˚C) E 2 70 ± 0 2 F 2 30 ± 0 1

Datasheet: 4128 , 5302 , 13002AH , 13003ADA , 13003BS , 13003DE , 13003DF , 13003DH , 431 , 13003EDA , 13005EC , 2SA1627A , 2SC5027E , 2SC5353B , 2SC5889 , 2SD2470 , 4124D .

 


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