4126D Specs and Replacement
Type Designator: 4126D
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
4126D Substitution
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4126D datasheet
UNISONIC TECHNOLOGIES CO., LTD 4126D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4126D is a middling voltage NPN power transistor. it uses UTC s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4126D is suitable for commonly power amplifier circuit, electro... See More ⇒
New Product Si4126DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.00275 at VGS = 10 V 39 100 % Rg and UIS Tested COMPLIANT 30 30 nC 0.0034 at VGS = 4.5 V 35 APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-8 D SD 1 8 SD ... See More ⇒
Detailed specifications: 13003EDA, 13005EC, 2SA1627A, 2SC5027E, 2SC5353B, 2SC5889, 2SD2470, 4124D, 2SC2625, 4128D, 5302D, C6084, D4120P, D65H2, HJ44H11, MJE13001, MJE13001P
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