HJ44H11 Specs and Replacement
Type Designator: HJ44H11
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-220 SOT-223 TO-252
HJ44H11 Transistor Equivalent Substitute - Cross-Reference Search
HJ44H11 detailed specifications
hj44h11.pdf
UNISONIC TECHNOLOGIES CO., LTD HJ44H11 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HJ44H11 is designed for such applications as series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others. ORDERING INFORMATIO... See More ⇒
Detailed specifications: 2SD2470 , 4124D , 4126D , 4128D , 5302D , C6084 , D4120P , D65H2 , 2SC945 , MJE13001 , MJE13001P , MJE13002-E , MJE13003D , MJE13003DP , MJE13003-E , MJE13003P , MJE13005DK .
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