T2096 Datasheet. Specs and Replacement

Type Designator: T2096  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO-251 TO-252

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T2096 datasheet

 ..1. Size:199K  utc

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T2096

UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES * Pb-free package is available * Collector-Emitter voltage VCEO = 400V * Pulse collector current to 4A ORDE... See More ⇒

 0.1. Size:98K  renesas

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T2096

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: MJE13009K, MJE13009P, MMBT9018, MPSA194, MPSA44H, PZT1816, PZT4033, SB2202, A1013, TC200, TUL1102, TUL1203, UBV45, ULB121, ULB122, ULB124, UN1066

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