T2096
Datasheet, Equivalent, Cross Reference Search
Type Designator: T2096
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15
W
Maximum Collector-Base Voltage |Vcb|: 800
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 8
V
Maximum Collector Current |Ic max|: 2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 20
MHz
Collector Capacitance (Cc): 20
pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package:
TO-251
TO-252
T2096
Transistor Equivalent Substitute - Cross-Reference Search
T2096
Datasheet (PDF)
..1. Size:199K utc
t2096.pdf
UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES * Pb-free package is available * Collector-Emitter voltage: VCEO = 400V * Pulse collector current to 4A ORDE
0.1. Size:98K renesas
rej03g1186 hat2096hds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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