All Transistors. 2N638B Datasheet

 

2N638B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N638B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 2N638B Transistor Equivalent Substitute - Cross-Reference Search

   

2N638B Datasheet (PDF)

 9.1. Size:164K  motorola
2n6387 2n6388.pdf

2N638B 2N638B

Order this documentMOTOROLAby 2N6387/DSEMICONDUCTOR TECHNICAL DATA2N6387Plastic Medium-Power2N6388*Silicon Transistors*Motorola Preferred Device. . . designed for generalpurpose amplifier and lowspeed switching applications.DARLINGTON High DC Current Gain 8 AND 10 AMPEREhFE = 2500 (Typ) @ IC = 4.0 AdcNPN SILICON CollectorEmitter Sustaining Voltage

 9.2. Size:109K  st
2n6388.pdf

2N638B 2N638B

2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power32transistor in monolithic Darlington configuration1mounted in Jedec TO-220 plastic package.It is inteded for use in low and mediu

 9.3. Size:205K  central
2n6383 2n6384 2n6385.pdf

2N638B 2N638B

TM2N6383Central2N6384Semiconductor Corp.2N6385NPN SILICON POWER DESCRIPTION:DARLINGTON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3683 SERIEStypes are NPN Silicon Power Darlington Transistorsdesigned for power amplifier applications.MARKING: FULL PART NUMBERTO-3 CASEMAXIMUM RATINGS: (TC=25C) SYMBOL 2N6383 2N6384 2N6385 UNITSCollector-Base Voltage VCBO 40 60 80 VColl

 9.4. Size:160K  mospec
2n6386-88.pdf

2N638B 2N638B

AAA

 9.5. Size:146K  mospec
2n6383-85 2n6648-49 2n6650.pdf

2N638B 2N638B

AAA

 9.6. Size:19K  semelab
2n6385smd05.pdf

2N638B 2N638B

2N6385SMD05MECHANICAL DATADimensions in mm (inches)SILICON POWER NPNDARLINGTON TRANSISTOR7.54 (0.296)0.76 (0.030)min.FEATURES3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) High Gain Darlington Performance1 32 APPLICATIONS Audio Amplifiers Hammer Drivers 0.127 (0.005) Shunt and Series Regulators16 PLCS 0.127 (0.005) 0.50(0.020)

 9.7. Size:87K  cdil
2n6387 8.pdf

2N638B 2N638B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N6387NPN PLASTIC MEDIUM DARLINGTON POWER TRANSISTORS2N6388TO-220Plastic PackageDesigned for General Purpose Amplifier and Low Speed Switching ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N6387 2N6388 UNITVCEO Collector Emitter Voltage 60 80 VVCBO Collector Base Voltage

 9.8. Size:153K  jmnic
2n6383 2n6384 2n6385.pdf

2N638B 2N638B

JMnic Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN DESCRIPTION1 B

 9.9. Size:158K  jmnic
2n6386 2n6387 2n6388.pdf

2N638B 2N638B

JMnic Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to

 9.10. Size:41K  hsmc
h2n6388.pdf

2N638B 2N638B

Spec. No. : HE6714HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.11.03MICROELECTRONICS CORP.Page No. : 1/4H2N6388NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N6388 is designed for general-purpose amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ........................................

 9.11. Size:118K  inchange semiconductor
2n6383 2n6384 2n6385.pdf

2N638B 2N638B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 DESCRIPTION With TO-3 package Complement to type 2N6648/6649/6650 DARLINGTON High DC current gain APPLICATIONS Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN

 9.12. Size:121K  inchange semiconductor
2n6386 2n6387 2n6388.pdf

2N638B 2N638B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION With TO-220C package Complement to type 2N6666/6667/6668 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION1 Base Collecto

 9.13. Size:120K  inchange semiconductor
2n6388.pdf

2N638B 2N638B

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6388 DESCRIPTION With TO-220 package High current capability DARLINGTON APPLICATIONS Intended for use in low and medium frequency power applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMET

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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