UN1596 Specs and Replacement
Type Designator: UN1596
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 500
Package: SOT-223
UN1596 Substitution
- BJT ⓘ Cross-Reference Search
UN1596 datasheet
UNISONIC TECHNOLOGIES CO., LTD UN1596 Preliminary NPN SILICON TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR DESCRIPTION The UTC UN1596 are series of NPN silicon planar transistor, which has gain of 500 at IC=100mA.It can be used in such applications battery powered circuit and darlington replacement. FEATURES * Gain 500 @ IC=100mA * Low saturation vo... See More ⇒
Detailed specifications: TUL1102, TUL1203, UBV45, ULB121, ULB122, ULB124, UN1066, UN1518, D882P, UP1496, UP1753, UP1851, UP1853, UP1855, UP1855A, UP1856, UP1868
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