USS4350 Datasheet and Replacement
Type Designator: USS4350
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT-223 SOT-89
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USS4350 Datasheet (PDF)
uss4350.pdf

UNISONIC TECHNOLOGIES CO., LTD USS4350 NPN SILICON TRANSISTOR 50V, 3A NPN LOW VCE(SAT) TRANSISTOR DESCRIPTION The UTC USS4350 is a low VCE (SAT) NPN transistor designed for applications, such as: DC/DC converter, supply line switching, battery charger, linear voltage regulation, driver in low supply voltage applications and inductive load driver. FEATURES * Collector
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: DTC115TE | DTD114E | CMLT4413 | ZX5T853G | 2SC1353 | HBC114ES6R | UNR221L
Keywords - USS4350 transistor datasheet
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History: DTC115TE | DTD114E | CMLT4413 | ZX5T853G | 2SC1353 | HBC114ES6R | UNR221L



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