All Transistors. HE8051 Datasheet

 

HE8051 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HE8051
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 9 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92

 HE8051 Transistor Equivalent Substitute - Cross-Reference Search

   

HE8051 Datasheet (PDF)

 ..1. Size:119K  utc
he8051.pdf

HE8051
HE8051

UNISONIC TECHNOLOGIES CO., LTD HE8051 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8051 is a low voltage high current small signal NPN 1transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. TO-92 FEATURES * Collector current up to 1.5A * Collector-Emitte

 9.1. Size:19K  utc
he8050l.pdf

HE8051
HE8051

UTC HE8050 NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPN TRANSISTORDESCRIPTION The UTC HE8050 is a low voltage high current smallsignal NPN transistor, designed for Class B push-pull 2Waudio amplifier for portable radio and general purposeapplications.1FEATURES*Collector current up to 1.5A*Collector-Emitter voltage up to 25 V*Complimentary to U

 9.2. Size:215K  utc
he8050.pdf

HE8051
HE8051

UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES *Collector current up to 1.5A *Collector-Emitter voltag

 9.3. Size:46K  hsmc
he8050.pdf

HE8051
HE8051

Spec. No. : HE6112HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.11.29MICROELECTRONICS CORP.Page No. : 1/4HE8050NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050 is designed for use in 2W output amplifier of portable radios in class Bpush-pull operation.TO-92Features High total power dissipation (PT: 2W, TC=25C) High collector current (IC: 1.5A)

 9.4. Size:54K  hsmc
he8050s.pdf

HE8051
HE8051

Spec. No. : HE6110HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050S is designed for general purpose amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................................................................

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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