2N64 Datasheet, Equivalent, Cross Reference Search

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6439/DThe RF LineNPN Silicon2N6439RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 VdcOutput Power = 60 Watts over 225 to 400 MHz Band60 W, 225 to 400 MHzMin

Order this documentMOTOROLAby 2N6487/DSEMICONDUCTOR TECHNICAL DATANPN2N6487Complementary Silicon PlasticPower Transistors*2N6488PNP. . . designed for use in generalpurpose amplifier and switching applications. DC Current Gain Specified to 15 Amperes 2N6490hFE = 20150 @ IC = 5.0 AdchFE = 5.0 (Min) @ IC = 15 Adc2N6491* CollectorEmitter Sustaining

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N6426/DDarlington Transistors2N6426*NPN Silicon2N6427*Motorola Preferred DeviceCOLLECTOR 3BASE2EMITTER 112MAXIMUM RATINGS 3Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 40 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 12 Vd

Order this documentMOTOROLAby 2N6497/DSEMICONDUCTOR TECHNICAL DATA2N64972N6498*High Voltage NPN Silicon Power*Motorola Preferred DeviceTransistors5 AMPERE. . . designed for high voltage inverters, switching regulators and lineoperatedPOWER TRANSISTORSamplifier applications. Especially well suited for switching power supply applications.NPN SILICON High Collecto

Order this documentMOTOROLAby 2N6436/DSEMICONDUCTOR TECHNICAL DATA2N6436High-Power PNP Silicon2N6437Transistors2N6438*. . . designed for use in industrialmilitary power amplifier and switching circuit*Motorola Preferred Deviceapplications. High CollectorEmitter Sustaining Voltage 25 AMPEREVCEO(sus) = 80 Vdc (Min) 2N6436POWER TRANSISTORSVCEO(sus)

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N6427NPN Darlington transistor1997 Jul 04Product specificationFile under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN Darlington transistor 2N6427FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 collector High DC current gain (min. 10

2N64872N6488/2N6490COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The 2N6487 and 2N6488 are siliconepitaxial-base NPN transistors in Jedec TO-220plastic package.They are inteded for use in power linear and low32frequency switching applications.1The 2N6487 complementary type is 2N6490.

Discrete POWER & SignalTechnologies2N6426C TO-92BENPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV Collector-Base Vo

2N6427 MMBT6427CEC TO-92BBSOT-23EMark: 1VNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourced fromProcess 05. See MPSA14 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collect

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

2N6497High Voltage NPN SiliconPower TransistorsThese devices are designed for high voltage inverters, switchingregulators and line-operated amplifier applications. Especially wellsuited for switching power supply applications.http://onsemi.comFeatures5 AMPERE High Collector-Emitter Sustaining Voltage -VCEO(sus) = 250 Vdc (Min)POWER TRANSISTORS Excellent DC Current

2N6487, 2N6488 (NPN),2N6490, 2N6491 (PNP)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andwww.onsemi.comswitching applications.Features15 AMPERE High DC Current GainCOMPLEMENTARY SILICON High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact Package60-80 VOLTS, 75 WATTS These

Order this documentSEMICONDUCTOR TECHNICAL DATAby 2N6439/DThe RF LineNPN Silicon2N6439RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 VdcOutput Power = 60 Watts over 225 to 400 MHz Band60 W, 225 to 400 MHzMinimum Gain

AAAA

2N6462Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 300V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N6463Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 250V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N6465Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 110V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6466Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar NPN Device. 1 2VCEO = 130V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6468Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 130V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

2N6425Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 300V IC = 0.25A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS sp

2N6461Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 300V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N6464Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 250V dia.IC = 0.1A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N6467Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 110V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

ABoca Semiconductor Corp. (BSC)http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comA

ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

ABoca Semiconductor Corp.http://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.comAhttp://www.bocasemi.com

ABoca Semiconductor Corp http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N6486, 2N6487, 2N64882N6489, 2N6490, 2N64912N6486, 6487, 6488 NPN PLASTIC POWER TRANSISTORS2N6489, 6490, 6491 PNP PLASTIC POWER TRANSISTORSGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON TRANSISTORS 2N6430, 6431TO-18Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N6430 2N6431 UNITVCEOCollector Emitter Voltage 200 300 VVCBOCollector Base Voltage 200 300 VVEBOEmitter Base Volta

Databook.fxp 1/13/99 2:09 PM Page B-24B-24 01/992N6449, 2N6450N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C High Voltage2N6449 2N6450Reverse Gate Source Voltage 300 V 200 VReverse Gate Drain Voltage 300 V 200 VContinuous Forward Gate Current 10 mA 10 mAContinuous Device Power Dissipation 800 mW 800 mWPower Derati

Databook.fxp 1/13/99 2:09 PM Page B-2501/99 B-252N6451, 2N6452N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6451 2N6452 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers

Databook.fxp 1/13/99 2:09 PM Page B-26B-26 01/992N6453, 2N6454N-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio Amplifiers2N6453 2N6454 Low-Noise, High GainReverse Gate Source Voltage 20 V 25 VAmplifiersReverse Gate Drain Voltage 20 V 25 VContinuous Forward Gate Current 10 mA 10 mA Low-Noise Preamplifiers

JMnic Product Specification Silicon NPN Power Transistors 2N6492 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS General-purpose power amplifier and low frequency swithing applications PINNING PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximu

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6491 DESCRIPTION With TO-220 package Complement to type 2N6488 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6488 DESCRIPTION With TO-220 package Complement to type 2N6491 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6487 DESCRIPTION With TO-220 package Complement to type 2N6490 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m

JMnic Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collector;connected to

JMnic Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outli

JMnic Product Specification Silicon NPN Power Transistors 2N6486 2N6487 2N6488 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi

JMnic Product Specification Silicon PNP Power Transistors 2N6420 DESCRIPTION With TO-66 package Continuous collector current-IC=-1A Power dissipation -PD=35W @TC=25 Complement to type 2N3583 APPLICATIONS High speed switching and linear amplifier High-voltage operational amplifiers Switching regulators ,converters Deflection stages and high fidelity ampli

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6490 DESCRIPTION With TO-220 package Complement to type 2N6487 APPLICATIONS It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute m

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N6488DESCRIPTIONDC Current Gain Specified to 15 Amperes-: h =20-150@ I = 5.0AFE C=5.0(Min)@ I =15ACCollector-Emitter Sustaining Voltage-: V =80Vdc(Min)CEO(SUS)Complement to Type 2N6491APPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Power Transistor 2N6423DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -500 VCBOV Collector-Emitter Voltage

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 DC Current Gain- : hFE= 10-75@IC= 2.5A APPLICATIONS Designed for high voltage inverters, switching regulators and line operated amplifier applica

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6470 2N6471 2N6472 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose types of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin

isc Silicon NPN Darlington Power Transistor 2N6492DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 3AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow frequency swithing applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2N6495DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEOWith TO-66 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and wide-band amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon PNP Power Transistor 2N6425DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -325 VCBOV Collector-Emitter Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6488DESCRIPTIONDC Current Gain Specified to 15 Amperes-: h =20-150@ I = 5.0AFE C=5.0(Min)@ I =15ACCollector-Emitter Sustaining Voltage-: V =80Vdc(Min)CEO(SUS)Complement to Type 2N6491APPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6486 2N6487 2N6488 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6489 2N6490 2N6491 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitte

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6467 2N6468 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6465 2N6466 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum rati

isc Silicon NPN Darlington Power Transistor 2N6493DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 3AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow frequency swithing applications.ABSOLUTE MAXI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6475 2N6476 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified out

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6470 DESCRIPTION Excellent Safe Operating Area High DC Current Gain- : hFE= 20-150(Min)@IC = 5A Low Saturation Voltage- : VCE(sat)= 1.3V(Max)@ IC = 5A APPLICATIONS Designed for general-purpose switching and linear amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6477 2N6478 DESCRIPTION With TO-220 package Low collector saturation voltage High voltage ratings Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power switching circuits Solenoid drivers PINNING PIN DESCRIPTION1 Base Collecto

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338~2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6489 2N6490 2N6491 DESCRIPTION With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1

isc Silicon NPN Darlington Power Transistor 2N6494DESCRIPTIONHigh DC current gain: h = 500(Min)@ I = 3AFE CWith TO-3 packageLow collector saturation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier andlow frequency swithing applications.ABSOLUTE MAXI

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6469 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area High gain at high current APPLICATIONS General-purpose of switching and linear-amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol

isc Silicon PNP Power Transistor 2N6422DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-300V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -500 VCBOV Collector-Emitter Voltage

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCRIPTION With TO-66 package Excellent safe operating area Complement to type 2N6467 2N6468 APPLICATIONS For use in audio amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum rat

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6473 2N6474 DESCRIPTION With TO-220 package Low collector saturation voltage Excellent safe operating area APPLICATIONS General-purpose medium power for switching and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute ma

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6420 DESCRIPTION Contunuous Collector Current-IC= -1A Power Dissipation-PC= 35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= -5.0 V(Max)@ IC = -1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s