BLD155DL Specs and Replacement
Type Designator: BLD155DL
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
BLD155DL Substitution
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BLD155DL datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN / L SERIES TRANSISTORS BLD155DL NPN / L SERIES TRANSISTORS BLD155DL NPN /... See More ⇒
Detailed specifications: BLD133DL , BLD135D , BLD135DH , BLD135DL , BLD137D , BLD137DL , BLD139D , BLD139DL , BD222 , BLDB128D , BUL68H5T , MJE13001AH , MJE13001H , MJE13002AHT , MJE13003HT , LB120A3 , 2N4401A3 .
History: MJE13003HT
Keywords - BLD155DL pdf specs
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History: MJE13003HT
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