All Transistors. BUL68H5T Datasheet

 

BUL68H5T Datasheet and Replacement


   Type Designator: BUL68H5T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220 TO220FP TO251 TO251S TO252
 

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BUL68H5T Datasheet (PDF)

 ..1. Size:263K  sisemi
 bul68h5t.pdf pdf_icon

BUL68H5T

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationMJE /MJE SERIES TRANSISTORS BUL68H5TMJE /MJE SERIES TRANSISTORS BUL68H5TMJE /MJE

 9.1. Size:14K  semelab
 bul68a.pdf pdf_icon

BUL68H5T

BUL68ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND

 9.2. Size:14K  semelab
 bul68b.pdf pdf_icon

BUL68H5T

BUL68BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252)HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)5.46 (0.215) 0.94 (0.037)SILICON POWER TRANSISTOR1.09 (0.043)1.30 (0.051)Designed for use in 5.97 (0.235)6.22 (0.245)electronic ballast applications1 2 3 SEMEFAB DESIGNED AND

 9.3. Size:84K  jmnic
 bul6825.pdf pdf_icon

BUL68H5T

Product Specification www.jmnic.com Silicon Power Transistors BUL6825 DESCRIPTION High voltage ,high speed With TO-220C package APPLICATIONS Relay drivers Inverters Switching regulators Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 emitterLIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - BUL68H5T transistor datasheet

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