2N6409 Specs and Replacement
Type Designator: 2N6409
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: X104-1
2N6409 Substitution
- BJT ⓘ Cross-Reference Search
2N6409 datasheet
Detailed specifications: 2N6393, 2N639A, 2N639B, 2N64, 2N640, 2N6406, 2N6407, 2N6408, TIP32C, 2N641, 2N6410, 2N6411, 2N6412, 2N6413, 2N6414, 2N6415, 2N6416
Keywords - 2N6409 pdf specs
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2N6409 equivalent finder
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