BTA1579S3 Specs and Replacement
Type Designator: BTA1579S3
SMD Transistor Code: 2L
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 2.7 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT323
BTA1579S3 Substitution
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BTA1579S3 datasheet
Spec. No. C307S3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2011.09.20 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O... See More ⇒
Spec. No. C306S3 Issued Date 2002.05.11 Revised Date 2014.01.24 CYStech Electronics Corp. Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating... See More ⇒
Spec. No. C307M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac... See More ⇒
Detailed specifications: BTA1210J3 , BTA1210T3 , BTA1270A3 , BTA1300A3 , BTA1514M3 , BTA1514N3 , BTA1542N3 , BTA1576S3 , 2SC1815 , BTA1640F3 , BTA1640FP , BTA1640I3 , BTA1640J3 , BTA1640T3 , BTA1664L3 , BTA1664M3 , BTA1721N3 .
History: 2SC1068
Keywords - BTA1579S3 pdf specs
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History: 2SC1068
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