BTA1640I3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTA1640I3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO251
BTA1640I3 Transistor Equivalent Substitute - Cross-Reference Search
BTA1640I3 Datasheet (PDF)
bta1640i3.pdf
Spec. No. : C657I3 Issued Date : 2007.04.04 CYStech Electronics Corp.Revised Date :2010.03.23 Page No. : 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640I3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant package Symbol Outline TO
bta1640f3.pdf
Spec. No. : C657F3 Issued Date : 2010.09.21 CYStech Electronics Corp.Revised Date : Page No. : 1/6 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640F3 VCE(SAT) -0.4V(max) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free lead plating package Symbol Outline
bta1640t3.pdf
Spec. No. : C657T3 Issued Date : 2011.02.23 CYStech Electronics Corp.Revised Date :2012.06.14 Page No. : 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640T3 RCESAT 70m(typ.) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. Excellent current gain linearity. RoHS compliant package. Symbol Outl
bta1640fp.pdf
Spec. No. : C657FP Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2009.09.16 Page No. : 1/4 PNP Epitaxial Planar Power Transistor BTA1640FP Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free package Symbol Outline TO-220FP BTA1640FPBBase CCollecto
bta1640j3.pdf
Spec. No. : C657J3 Issued Date : 2007.04.04 CYStech Electronics Corp.Revised Date :2014.05.23 Page No. : 1/6 PNP Epitaxial Planar Power Transistor BVCEO -50VIC -7ABTA1640J3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant and halogen-free package Sy
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
