BTA1664M3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTA1664M3
SMD Transistor Code: BA
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT89
BTA1664M3 Transistor Equivalent Substitute - Cross-Reference Search
BTA1664M3 Datasheet (PDF)
bta1664m3.pdf
Spec. No. : C315M3 Issued Date : 2005.01.25 CYStech Electronics Corp.Revised Date : 2014.02.14 Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTA1664M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664M3 SOT-89 BBase B C E CCollector EEmitte
bta1664l3.pdf
Spec. No. : C315L3 Issued Date : 2008.03.14 CYStech Electronics Corp.Revised Date :2011.09.06 Page No. : 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTA1664L3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free lead plating and halogen-free package Symbol Outline BTA1664L3SOT-223 CEBBase CCCollector BEEm
btb16 btb16 bta16.pdf
BTA/BTB16 and T16 SeriesSNUBBERLESS , LOGIC LEVEL & STANDARD 16A TRIACSMAIN FEATURES:A2Symbol Value UnitGIT(RMS)16 AA1VDRM/VRRM600, 700 and 800 VA2IGT (Q1)10 to 50 mAA1A2DESCRIPTIONGAvailable either in through-hole or surface-mountpackages, the BTA/BTB16 and T16 triac series is D2PAK(T16-G)suitable for general purpose AC switching. TheyA2can
bta1640f3.pdf
Spec. No. : C657F3 Issued Date : 2010.09.21 CYStech Electronics Corp.Revised Date : Page No. : 1/6 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640F3 VCE(SAT) -0.4V(max) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free lead plating package Symbol Outline
bta1640t3.pdf
Spec. No. : C657T3 Issued Date : 2011.02.23 CYStech Electronics Corp.Revised Date :2012.06.14 Page No. : 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640T3 RCESAT 70m(typ.) Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A. Excellent current gain linearity. RoHS compliant package. Symbol Outl
bta1640fp.pdf
Spec. No. : C657FP Issued Date : 2004.09.01 CYStech Electronics Corp.Revised Date :2009.09.16 Page No. : 1/4 PNP Epitaxial Planar Power Transistor BTA1640FP Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free package Symbol Outline TO-220FP BTA1640FPBBase CCollecto
bta1640j3.pdf
Spec. No. : C657J3 Issued Date : 2007.04.04 CYStech Electronics Corp.Revised Date :2014.05.23 Page No. : 1/6 PNP Epitaxial Planar Power Transistor BVCEO -50VIC -7ABTA1640J3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant and halogen-free package Sy
bta1640i3.pdf
Spec. No. : C657I3 Issued Date : 2007.04.04 CYStech Electronics Corp.Revised Date :2010.03.23 Page No. : 1/5 PNP Epitaxial Planar Power Transistor BVCEO -30VIC -7ABTA1640I3 RCESAT 70m Features Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A Excellent current gain linearity RoHS compliant package Symbol Outline TO
vbta161k.pdf
001VBTA161Kwww.VBsemi.comN-Channel 60V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = 10 V60 330 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pFSOT-523 Fast Switching Speed: 25 nsSC-75 Low Input and Output Leakage TrenchFET Pow
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