BTA9012A3 Specs and Replacement

Type Designator: BTA9012A3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 144

Noise Figure, dB: -

Package: TO92

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BTA9012A3 datasheet

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BTA9012A3

Spec. No. C305A3 Issued Date 2014.02.17 CYStech Electronics Corp. Revised Date 2014.03.11 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3 Description The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10... See More ⇒

Detailed specifications: BTA1952E3, BTA1952I3, BTA1952J3, BTA1972K3, BTA2029Y3, BTA3513I3, BTA3513J3, BTA4403A3, S9013, BTB589N3, BTB718N3, BTB772AJ3, BTB772AM3, BTB772I3, BTB772J3, BTB772ST3, BTB772T3

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