BTA9012A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTA9012A3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 144
Noise Figure, dB: -
Package: TO92
BTA9012A3 Transistor Equivalent Substitute - Cross-Reference Search
BTA9012A3 Datasheet (PDF)
bta9012a3.pdf
Spec. No. : C305A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3Description The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .