All Transistors. BTA9012A3 Datasheet

 

BTA9012A3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTA9012A3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 144
   Noise Figure, dB: -
   Package: TO92

 BTA9012A3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTA9012A3 Datasheet (PDF)

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bta9012a3.pdf

BTA9012A3
BTA9012A3

Spec. No. : C305A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.03.11 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA9012A3Description The BTA9012A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.09V at IC/IB = -100mA / -10

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SB1161 | BSY47

 

 
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