All Transistors. BTB818AG6 Datasheet

 

BTB818AG6 Datasheet and Replacement


   Type Designator: BTB818AG6
   SMD Transistor Code: AF
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TSOP6
 

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BTB818AG6 Datasheet (PDF)

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BTB818AG6

Spec. No. : C240G6 Issued Date : 2013.05.03 CYStech Electronics Corp.Revised Date : 2013.08.29 Page No. : 1/9 Low Vcesat PNP Epitaxial Planar Transistor BTB818AG6 Features Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA Pb-free lead plating and halogen-free package Equivalent Circuit Outline TSOP-6 BTB818AG6Absolute Maximum Ratings (Ta=25C

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BTB818AG6

Spec. No. : C313N6 Issued Date : 2011.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB818N6 Features Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400mA /- 20mA Pb-free package Equivalent Circuit Outline SOT-23-6L BTB818N6Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollec

Datasheet: BTB589N3 , BTB718N3 , BTB772AJ3 , BTB772AM3 , BTB772I3 , BTB772J3 , BTB772ST3 , BTB772T3 , NJW0281G , BTB818N6 , BTB826M3 , BTB857AD3 , BTB857D3 , BTB1184J3 , BTB1188AM3 , BTB1188M3 , BTB1188M3R .

History: 2SC1821

Keywords - BTB818AG6 transistor datasheet

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