BTB818N6 Specs and Replacement
Type Designator: BTB818N6
SMD Transistor Code: BK
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-23-6L
BTB818N6 Substitution
- BJT ⓘ Cross-Reference Search
BTB818N6 datasheet
Spec. No. C313N6 Issued Date 2011.01.20 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB818N6 Features Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400mA /- 20mA Pb-free package Equivalent Circuit Outline SOT-23-6L BTB818N6 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collec... See More ⇒
Spec. No. C240G6 Issued Date 2013.05.03 CYStech Electronics Corp. Revised Date 2013.08.29 Page No. 1/9 Low Vcesat PNP Epitaxial Planar Transistor BTB818AG6 Features Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA Pb-free lead plating and halogen-free package Equivalent Circuit Outline TSOP-6 BTB818AG6 Absolute Maximum Ratings (Ta=25 C... See More ⇒
Detailed specifications: BTB718N3 , BTB772AJ3 , BTB772AM3 , BTB772I3 , BTB772J3 , BTB772ST3 , BTB772T3 , BTB818AG6 , 2SD669A , BTB826M3 , BTB857AD3 , BTB857D3 , BTB1184J3 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 .
History: BTB818AG6 | BC107B | 2SB0950 | BC107C | BTA3513I3 | BTA3513J3
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