BTB818N6 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTB818N6
SMD Transistor Code: BK
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23-6L
BTB818N6 Transistor Equivalent Substitute - Cross-Reference Search
BTB818N6 Datasheet (PDF)
btb818n6.pdf
Spec. No. : C313N6 Issued Date : 2011.01.20 CYStech Electronics Corp.Revised Date : Page No. : 1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB818N6 Features Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400mA /- 20mA Pb-free package Equivalent Circuit Outline SOT-23-6L BTB818N6Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits UnitCollec
btb818ag6.pdf
Spec. No. : C240G6 Issued Date : 2013.05.03 CYStech Electronics Corp.Revised Date : 2013.08.29 Page No. : 1/9 Low Vcesat PNP Epitaxial Planar Transistor BTB818AG6 Features Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA Pb-free lead plating and halogen-free package Equivalent Circuit Outline TSOP-6 BTB818AG6Absolute Maximum Ratings (Ta=25C
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
