BTB857AD3 Specs and Replacement
Type Designator: BTB857AD3
SMD Transistor Code: B857
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO126ML
BTB857AD3 Substitution
- BJT ⓘ Cross-Reference Search
BTB857AD3 datasheet
Spec. No. C601D3 Issued Date 2008.12.23 CYStech Electronics Corp. Revised Date 2012.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB857AD3 Features Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA RoHS compliant package Symbol Outline BTB857AD3 TO-126ML B Ba... See More ⇒
Spec. No. C601D3 Issued Date 2008.12.23 CYStech Electronics Corp. Revised Date Page No. 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB857D3 Features Low VCE(sat), VCE(sat)=-0.3V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103D3 RoHS compliant package Symbol Outline BTB857D... See More ⇒
Detailed specifications: BTB772AM3, BTB772I3, BTB772J3, BTB772ST3, BTB772T3, BTB818AG6, BTB818N6, BTB826M3, BC549, BTB857D3, BTB1184J3, BTB1188AM3, BTB1188M3, BTB1188M3R, BTB1197N3, BTB1198A3, BTB1198K3
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