BTB4110D3 Specs and Replacement
Type Designator: BTB4110D3
SMD Transistor Code: B4110
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: TO126ML
BTB4110D3 Substitution
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BTB4110D3 datasheet
Spec. No. C815D3 Issued Date 2011.03.25 CYStech Electronics Corp. Revised Date Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -20V IC -5A BTB4110D3 RCESAT 75m (typ.) Features Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -4A / -100mA Excellent DC current gain characteristics Pb-free package Symbol Outline BTB4110D3 TO-126ML... See More ⇒
Detailed specifications: BTB1424L3, BTB1424N3, BTB1427M3, BTB1498N3, BTB1580J3, BTB1580L3, BTB1580M3, BTB1590N3, 2SA1943, BTB4511J3, BTB5140N3, BTB5213L3, BTB5240N3, BTB5839M3, BTB9050N3, BTB9435J3, BTB9435L3
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