BTC2383A3 Specs and Replacement

Type Designator: BTC2383A3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 280 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 BTC2383A3 Substitution

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BTC2383A3 datasheet

 ..1. Size:218K  cystek

 btc2383a3.pdf pdf_icon

BTC2383A3

Spec. No. C316 Issued Date 2005.12.21 CYStech Electronics Corp. Revised Date 2006.03.17 Page No. 1/9 General Purpose NPN Epitaxial Planar Transistor BTC2383A3 Features High breakdown voltage, BV 200V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTA1013A3 Pb-free package Symbol Outlin... See More ⇒

 7.1. Size:366K  cystek

 btc2383k3.pdf pdf_icon

BTC2383A3

Spec. No. C625K3 Issued Date 2014.04.17 CYStech Electronics Corp. Revised Date Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 160V IC 1A BTC2383K3 RCESAT(MAX) 1 Features High breakdown voltage , BV =160V CEO Low Saturation Voltage, V =0.2V(typ)@I =500mA, I =50mA CE(sat) C B Complementary to BTA1013K3 Pb-free lead plating and halogen-free ... See More ⇒

 9.1. Size:449K  cystek

 btc2328ak3.pdf pdf_icon

BTC2383A3

Spec. No. C858K3 Issued Date 2014.11.24 CYStech Electronics Corp. Revised Date Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 30V IC 2A BTC2328AK3 RCESAT(MAX) 333m Features Low Saturation Voltage, V =0.5V(max)@I =1.5A, I =30mA CE(sat) C B Complementary to BTA928AK3 Pb-free lead plating and halogen-free package Symbol Outline TO-92L BTC2328... See More ⇒

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