BTC2412N3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC2412N3
SMD Transistor Code: C4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT23
BTC2412N3 Transistor Equivalent Substitute - Cross-Reference Search
BTC2412N3 Datasheet (PDF)
btc2412n3.pdf
Spec. No. : C202N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2014.04.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2412N3Description The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose switching application. Low Cob. Typ. Cob=2.0pF Complementary to BTA1037N3 . Pb-free lead
btc2411n3.pdf
Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2013.09.25 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411N3Description The BTC2411N3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
btc2411l3.pdf
Spec. No. : C203L3 Issued Date : 2005.02.22 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411L3Description The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/
btc2411s3.pdf
Spec. No. : C203S3-R Issued Date : 2003.11.18 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC2411S3Description The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat
btc2411n3g.pdf
Spec. No. : C203N3G Issued Date : 2008.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BTC2411N3GDescription The BTC2411N3G is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.4V at I /I = 500mA/50mA.
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: GE6062
