BTC3415A3 Specs and Replacement
Type Designator: BTC3415A3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.1 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
BTC3415A3 Substitution
- BJT ⓘ Cross-Reference Search
BTC3415A3 datasheet
Spec. No. C209A3 Issued Date 2008.01.25 CYStech Electronics Corp. Revised Date 2014.03.06 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTC3415A3 Description High breakdown voltage. (BV =300V) CEO Low collector output capacitance. (Typ. 2.1pF at V =30V) CB Ideal for chroma circuit. Pb-free lead plating and halogen-free package. Symbo... See More ⇒
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